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MASTERGAN2

Name: STMicroelectronics MASTERGAN2
Brand: STMicroelectronics
SKU: 511-MASTERGAN2
Price: 17.44 SGD
Availability: InStock

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Mouser No:

511-MASTERGAN2

Mfr. No:

MASTERGAN2

Mfr.:

STMicroelectronics

Description:

Gate Drivers High power density 600V Half bridge driver with two enhancement mode GaN HEMTs

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Datasheet:

MASTERGAN2 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about STMicroelectronics MASTERGAN2

In Stock: 172

Stock:: 172 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 172 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$17.44	$17.44
	$14.11	$141.10
	$13.27	$331.75
	$12.25	$1,225.00
	$8.15	$2,037.50
	$7.42	$3,710.00
	$6.95	$6,950.00
2,500	Quote

Alternative Packaging

Mfr. Part No.:

MASTERGAN2TR

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$9.34

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Gate Drivers
RoHS:
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Product:	Half-Bridge Drivers
Series:	MASTERGAN
Packaging:	Tray
Brand:	STMicroelectronics
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Number of Drivers:	2 Driver
Number of Outputs:	1 Output
Output Current:	10 A
Product Type:	Gate Drivers
Factory Pack Quantity:	1560
Subcategory:	PMIC - Power Management ICs
Supply Voltage - Max:	15 V
Supply Voltage - Min:	3.3 V
Type:	High-Side, Low-Side
Unit Weight:	150 mg

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Datasheet

MASTERGAN2 Datasheet (PDF)

PCN

CNHTS:: 8542399000
USHTS:: 8542390090
ECCN:: EAR99

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an R_DS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.