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LF2113BTR

Name: IXYS LF2113BTR
Brand: IXYS Integrated Circuits
SKU: 747-LF2113BTR
Price: 2.11 SGD
Availability: InStock

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Mouser No:

747-LF2113BTR

Mfr. No:

LF2113BTR

Mfr.:

IXYS Integrated Circuits

Description:

Gate Drivers HI LO Side DRVR 600V 2A SOIC-16

Datasheet:

LF2113BTR Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	Gate Drivers
RoHS:
Product:	IGBT, MOSFET Gate Drivers
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package/Case:	SOIC-16
Number of Drivers:	2 Driver
Number of Outputs:	2 Output
Supply Voltage - Min:	10 V
Supply Voltage - Max:	20 V
Rise Time:	15 ns
Fall Time:	13 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Reel
Brand:	IXYS Integrated Circuits
Logic Type:	CMOS
Maximum Turn-Off Delay Time:	94 ns
Maximum Turn-On Delay Time:	105 ns
Moisture Sensitive:	Yes
Operating Supply Current:	56 uA
Pd - Power Dissipation:	1.25 W
Product Type:	Gate Drivers
Propagation Delay - Max:	20 ns
Factory Pack Quantity:	1500
Subcategory:	PMIC - Power Management ICs
Technology:	Si

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Datasheet

LF2113BTR Datasheet (PDF)

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Compliance Codes

CNHTS:: 8542399000
USHTS:: 8542390090
TARIC:: 8542399000
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

High-Side & Low-Side Gate Driver ICs

IXYS High-Side and Low-Side Gate Driver ICs offer 600mA/290mA to 4.5A/4.5A sink/source output current capabilities. The devices feature a wide operating voltage range of 10V to 20V. Protections include undervoltage lockout (UVLO) and shoot-through. IXYS High-Side and Low-Side Gate Driver ICs operate in a -40°C to +125°C temperature range and are available in SOIC-8, -14, -16 industry-standard packages and pin-outs.

Gate Drivers for N-Channel MOSFETs & IGBTs

IXYS Gate Drivers for N-Channel MOSFETs and IGBTs include high-voltage high-speed gate drivers and three-phase gate driver ICs. These devices are designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration or high-side / low-side configuration. The high-voltage technology enables the high side to switch to 600V in a bootstrap operation. The drivers provide feature high pulse current buffers designed for minimum driver cross conduction. Other features include logic inputs with 3.3V capability, Schmitt triggered logic inputs, and undervoltage lockout (UVLO) protection. IXYS Gate Drivers for N-Channel MOSFETs and IGBTs operate over an extended temperature range of -40°C to +125°C.