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ISC073N12LM6ATMA1

Name: Infineon ISC073N12LM6ATMA1
Brand: Infineon Technologies
SKU: 726-ISC073N12LM6ATMA
Price: 5.24 SGD
Availability: InStock

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Mouser No:

726-ISC073N12LM6ATMA

Mfr. No:

ISC073N12LM6ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET >100-150V

Datasheet:

ISC073N12LM6ATMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies ISC073N12LM6ATMA1

In Stock: 5,876

Stock:: 5,876

Can Dispatch Immediately

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On Order:: 5,000

Expected 15/7/2026
Factory Lead Time:: 52

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$5.24	$5.24
	$3.40	$34.00
	$2.39	$239.00
	$2.00	$1,000.00
	$1.85	$1,850.00
	$1.74	$4,350.00
Full Reel (Order in multiples of 5000)
	$1.74	$8,700.00

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	86 A
Rds On - Drain-Source Resistance:	7.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	14.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	125 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	5 ns
Forward Transconductance - Min:	45 S
Product Type:	MOSFETs
Rise Time:	3 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	7 ns
Part # Aliases:	ISC073N12LM6 SP005586060

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Datasheet

ISC073N12LM6ATMA1 Datasheet (PDF)

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Germany
Assembly Country of Origin:: China
Country of Diffusion:: Germany

The country is subject to change at the time of shipment.

OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilises thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced R_DS(ON) of 30% and are optimised for synchronous rectification.

OptiMOS™ 3 N-channel MOSFETs

Infineon Technologies OptiMOS™ 3 N-channel MOSFETs feature low on-state resistance in a SuperSO8 leadless package. OptiMOS 3 MOSFETs increase power density up to 50 percent in industrial, consumer and telecommunications applications. OptiMOS™ 3 is available in 40V, 60V and 80V N-channel MOSFETs in SuperSO8 and Shrink SuperSO8 (S3O8) packages. Compared to standard Transistor Outline (TO) packages, the SuperSO8 increase power density by as much as 50 percent.