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ISC024N08NM7ATMA1

Name: Infineon ISC024N08NM7ATMA1
Brand: Infineon Technologies
SKU: 726-ISC024N08NM7ATMA
Price: 4.92 SGD
Availability: InStock

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Mouser No:

726-ISC024N08NM7ATMA

Mfr. No:

ISC024N08NM7ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 7 PowerTransistor, 80 V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

ISC024N08NM7ATMA1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies ISC024N08NM7ATMA1

In Stock: 2,030

Stock:: 2,030

Can Dispatch Immediately

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On Order:: 5,000

Expected 30/7/2026

5,000

Expected 13/5/2027
Factory Lead Time:: 52

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$4.92	$4.92
	$3.21	$32.10
	$2.25	$225.00
	$1.89	$945.00
	$1.75	$1,750.00
Full Reel (Order in multiples of 5000)
	$1.47	$7,350.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PG-TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	167 A
Rds On - Drain-Source Resistance:	2.4 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.2 V
Qg - Gate Charge:	49 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	5 ns
Forward Transconductance - Min:	130 S
Product Type:	MOSFETs
Rise Time:	3.8 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	20.4 ns
Typical Turn-On Delay Time:	10.3 ns
Part # Aliases:	ISC024N08NM7 SP006183896

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Datasheet

ISC024N08NM7ATMA1 Datasheet (PDF)

Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: China
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

N-Channel OptiMOS™ 7 Power MOSFETs

Infineon Technologies N-Channel OptiMOS™ 7 Power MOSFETs are high-performance N-channel transistors designed for demanding power conversion applications. These MOSFETs offer very low on-resistance, superior thermal resistance, and excellent Miller ratio for dv/dt ruggedness. The OptiMOS™ 7 power MOSFETs are optimized for both hard-switching and soft-switching topologies, and FOM_oss. These MOSFETs are 100% avalanche tested and are RoHS compliant. The OptiMOS™ 7 power MOSFETs are halogen-free according to IEC61249‑2‑21.

N-Channel OptiMOS™ 7 80V Power MOSFETs

Infineon Technologies N-channel OptiMOS™ 7 80V Power MOSFETs are N-channel, normal level devices with superior thermal resistance. The OptiMOS 7 80V Power MOSFET series offers a soft-recovery body diode and is rated to 175°C. The Infineon OptiMOS 7 80V Power MOSFETs are available in a PG‑TDSON‑8 package and are optimized for motor drives and synchronous rectification applications.