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ISC019N08NM7ATMA1

Name: Infineon ISC019N08NM7ATMA1
Brand: Infineon Technologies
SKU: 726-ISC019N08NM7ATMA
Price: 5.16 SGD
Availability: InStock

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Mouser No:

726-ISC019N08NM7ATMA

Mfr. No:

ISC019N08NM7ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 7 n-channel power MOSFET 80 V in SuperSO8

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

ISC019N08NM7ATMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies ISC019N08NM7ATMA1

In Stock: 5,460

Stock:: 5,460 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$5.16	$5.16
	$3.38	$33.80
	$2.36	$236.00
	$2.15	$1,075.00
Full Reel (Order in multiples of 5000)
	$2.15	$10,750.00
10,000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PG-TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	209 A
Rds On - Drain-Source Resistance:	1.9 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.2 V
Qg - Gate Charge:	60 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	188 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	7.5 ns
Forward Transconductance - Min:	70 S
Product Type:	MOSFETs
Rise Time:	5.3 ns
Series:	OptiMOS 7
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	28 ns
Typical Turn-On Delay Time:	11 ns
Part # Aliases:	ISC019N08NM7 SP006166279

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Datasheet

ISC019N08NM7ATMA1 Datasheet (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel OptiMOS™ 7 Power MOSFETs

Infineon Technologies N-Channel OptiMOS™ 7 Power MOSFETs are high-performance N-channel transistors designed for demanding power conversion applications. These MOSFETs offer very low on-resistance, superior thermal resistance, and excellent Miller ratio for dv/dt ruggedness. The OptiMOS™ 7 power MOSFETs are optimized for both hard-switching and soft-switching topologies, and FOM_oss. These MOSFETs are 100% avalanche tested and are RoHS compliant. The OptiMOS™ 7 power MOSFETs are halogen-free according to IEC61249‑2‑21.