IS66WVC2M16ECLL-7010BLI

Name: ISSI IS66WVC2M16ECLL-7010BLI
Brand: ISSI
SKU: 870-WVC2M16EL7010BLI
Price: 12.88 SGD
Availability: InStock

Mouser No:

870-WVC2M16EL7010BLI

Mfr. No:

IS66WVC2M16ECLL-7010BLI

Mfr.:

ISSI

Description:

SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5, 2M x 16,70ns,1.7v 1.95v,54 Ball BGA (6x8 mm), RoHS

Datasheet:

IS66WVC2M16ECLL-7010BLI Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	SRAM
RoHS:
Memory Size:	32 Mbit
Organisation:	2 M x 16
Access Time:	70 ns
Interface Type:	Parallel
Supply Voltage - Max:	1.95 V
Supply Voltage - Min:	1.7 V
Supply Current - Max:	30 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Mounting Style:	SMD/SMT
Brand:	ISSI
Moisture Sensitive:	Yes
Product Type:	SRAM
Series:	IS66WVC2M16EALL
Factory Pack Quantity:	480
Subcategory:	Memory & Data Storage

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Datasheet

IS66WVC2M16ECLL-7010BLI Datasheet (PDF)

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Compliance Codes

CNHTS:: 8542320000
CAHTS:: 8542320020
USHTS:: 8542320002
MXHTS:: 8542320299
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

FEATURED PRODUCTS

ISSI

Serial RAM Devices

Contain 8Mb/16Mb/32Mb pseudo-static Random Access Memory (RAM) using a self-refresh DRAM array.

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QuadRAM Devices

Contain 8Mb/16Mb/32Mb pseudo-static Random Access Memory (RAM) using a self-refresh DRAM array.

Learn More

Octal Memory

Portfolio of high-speed, low pin count memory products that utilize the JEDEC xSPI interface.

Learn More

IS62WVS Serial SRAMs

Fabricated using high-performance CMOS technology to offer 20MHz clock rate and 4µA standby current.

Learn More

Pseudo SRAM/CellularRAM

High-speed, CMOS Pseudo-RAM developed for low-power, portable applications.

Learn More

In Stock: 480

Stock:: 480 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$12.88	$12.88
	$11.98	$119.80
	$11.86	$296.50
	$11.57	$578.50
	$11.29	$1,129.00

IS66WVC2M16ECLL-7010BLI

Mfr.: ISSI

Description: SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5, 2M x 16,70ns,1.7v 1.95v,54 Ball BGA (6x8 mm), RoHS

Specifications

Documents (1)

Datasheet

Environmental Documents

Product & Trade Compliance

More Information

Pseudo SRAM/CellularRAM

FEATURED PRODUCTS ISSI

In Stock: 480

Pricing (SGD)

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Mfr.:

ISSI

Description:

SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5, 2M x 16,70ns,1.7v 1.95v,54 Ball BGA (6x8 mm), RoHS

FEATURED PRODUCTS

ISSI