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IPD048N06L3GATMA1

Name: Infineon IPD048N06L3GATMA1
Brand: Infineon Technologies
SKU: 726-PD048N06L3GATMA1
Price: 3.02 SGD
Availability: InStock

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Mouser No:

726-PD048N06L3GATMA1

Mfr. No:

IPD048N06L3GATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET 60V

Datasheet:

IPD048N06L3GATMA1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies IPD048N06L3GATMA1

In Stock: 3,604

Stock:: 3,604 Can Dispatch Immediately

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$3.02	$3.02
	$2.18	$21.80
	$1.44	$144.00
	$1.13	$565.00
	$1.01	$1,010.00
Full Reel (Order in multiples of 2500)
	$0.919	$2,297.50
	$0.883	$4,415.00
	$0.774	$7,740.00

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	90 A
Rds On - Drain-Source Resistance:	4.8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	37 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	115 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	12 ns
Forward Transconductance - Min:	125 S
Product Type:	MOSFETs
Rise Time:	5 ns
Series:	XPD048N06
Factory Pack Quantity:	2500
Subcategory:	Transistors
Typical Turn-Off Delay Time:	56 ns
Typical Turn-On Delay Time:	11 ns
Part # Aliases:	IPD048N06L3 G SP005559924

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Datasheet

IPD048N06L3GATMA1 Datasheet (PDF)

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Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Malaysia

The country is subject to change at the time of shipment.

OptiMOS™ 3 N-channel MOSFETs

Infineon Technologies OptiMOS™ 3 N-channel MOSFETs feature low on-state resistance in a SuperSO8 leadless package. OptiMOS 3 MOSFETs increase power density up to 50 percent in industrial, consumer and telecommunications applications. OptiMOS™ 3 is available in 40V, 60V and 80V N-channel MOSFETs in SuperSO8 and Shrink SuperSO8 (S3O8) packages. Compared to standard Transistor Outline (TO) packages, the SuperSO8 increase power density by as much as 50 percent.