It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IAUCN08S7L013ATMA1

Name: Infineon IAUCN08S7L013ATMA1
Brand: Infineon Technologies
SKU: 726-IAUCN08S7L013ATM
Price: 5.95 SGD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-IAUCN08S7L013ATM

Mfr. No:

IAUCN08S7L013ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 7 Power-Transistor

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IAUCN08S7L013ATMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IAUCN08S7L013ATMA1

In Stock: 2,938

Stock:: 2,938 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$5.95	$5.95
	$3.92	$39.20
	$2.77	$277.00
	$2.53	$1,265.00
	$2.39	$2,390.00
	$2.36	$5,900.00
Full Reel (Order in multiples of 5000)
	$2.36	$11,800.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PG-TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	293 A
Rds On - Drain-Source Resistance:	1.26 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	120 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	219 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	35 ns
Product Type:	MOSFETs
Rise Time:	14 ns
Series:	OptiMOS 7
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	102.4 ns
Typical Turn-On Delay Time:	15 ns
Part # Aliases:	IAUCN08S7L013 SP006059915

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IAUCN08S7L013ATMA1 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 7 Automotive Power MOSFETs

Infineon Technologies is introducing its leading OptiMOS™ 7 Automotive Power MOSFETs technology with remarkably low on-state resistance, reduced switching losses, and enhanced ruggedness. OptiMOS 7 redefines the landscape of automotive power MOSFETs. The OptiMOS 7 MOSFET technology from Infineon establishes a new standard for automotive applications, allowing performance and efficiency while addressing the challenges of tomorrow's automotive systems.

OptiMOS™ 7 80V Automotive Power MOSFETs

Infineon Technologies OptiMOS™ 7 80V Automotive Power MOSFETs are built with Infineon’s leading-edge, power semiconductor technology. These MOSFETs are designed specifically for the high performance, quality, and robustness needed for demanding automotive applications. The OptiMOS™ 7 80V MOSFETs operate with a ±20V_GS gate source voltage and a temperature range of -55°C to 175°C. These MOSFETs are offered in top-side cooled SSO10T 5x7mm2 SMD package. The SSO10T package helps users achieve advancements in cooling and power density. The 80V power MOSFETs are MSL-1 rated, RoHS compliant, and 100% avalanche tested. These power MOSFETs are ideal for general automotive applications.