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GCMX080B120S1-E1

Name: SemiQ GCMX080B120S1-E1
Brand: SemiQ
SKU: 148-GCMX080B120S1-E1
Price: 28.22 SGD
Availability: InStock

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Mouser No:

148-GCMX080B120S1-E1

Mfr. No:

GCMX080B120S1-E1

Mfr.:

SemiQ

Description:

MOSFET Modules SiC 1200V 80mO MOSFET SOT-227

Datasheet:

GCMX080B120S1-E1 Datasheet (PDF)

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In Stock: 7

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Factory Lead Time:: 2 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$28.22	$28.22
	$20.27	$202.70
	$16.05	$1,605.00
	$16.04	$8,020.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	MOSFET Modules
RoHS:
REACH - SVHC:
Technology:	SiC
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	77 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	142 W
Packaging:	Tube
Brand:	SemiQ
Configuration:	Single
Fall Time:	11 ns
If - Forward Current:	10 A
Product Type:	MOSFET Modules
Rise Time:	4 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Type:	High Speed Switching
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	9 ns
Vf - Forward Voltage:	3.8 V
Vr - Reverse Voltage:	1.2 kV

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Datasheet

GCMX080B120S1-E1 Datasheet (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SiC MOSFET Power Modules

SemiQ SiC MOSFET Power Modules provide low on-state resistance at high temperatures with excellent switching performance, simplifying power electronic systems' thermal design. The SiC MOSFET Modules operate with zero switching loss to significantly increase efficiency and reducing heat dissipation, allowing smaller heatsinks.