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FS980R08A7F32BHPSA1

Name: Infineon FS980R08A7F32BHPSA1
Brand: Infineon Technologies
SKU: 726-FS980R08A7F32BHP
Price: 778.04 SGD
Availability: InStock

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Mouser No:

726-FS980R08A7F32BHP

Mfr. No:

FS980R08A7F32BHPSA1

Mfr.:

Infineon Technologies

Description:

MOSFET Modules HybridPACK Drive G2 with Si/SiC Fusion switch: Compact 750V B6-bridge power module optimized for traction inverter applications

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

FS980R08A7F32BHPSA1 Datasheet (PDF)

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Learn more about Infineon Technologies FS980R08A7F32BHPSA1

In Stock: 3

Stock:: 3 Can Dispatch Immediately

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Factory Lead Time:: 39 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$778.04	$778.04
	$596.81	$5,968.10

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFET Modules
RoHS:
Technology:	Si, SiC
Mounting Style:	Screw Mount
Vds - Drain-Source Breakdown Voltage:	750 V
Rds On - Drain-Source Resistance:	5.15 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	HybridPACK
Packaging:	Tray
Brand:	Infineon Technologies
Configuration:	Module
Fall Time:	76.8 ns
If - Forward Current:	600 A
Product:	Drive G2 Module
Product Type:	MOSFET Modules
Rise Time:	55.6 ns
Subcategory:	Discrete and Power Modules
Type:	Automotive
Typical Turn-Off Delay Time:	330 ns
Typical Turn-On Delay Time:	66.4 ns
Vf - Forward Voltage:	2.1 V
Part # Aliases:	FS980R08A7F32B SP006161968

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Datasheet

FS980R08A7F32BHPSA1 Datasheet (PDF)

Origin Classifications

Country of Origin:: Germany
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

HybridPACK™ Drive G2 Modules

Infineon Technologies HybridPACK™ Drive G2 Modules are compact power modules designed for hybrid and electric vehicle traction. The Infineon Technologies G2 modules offer scalable performance levels using Si or SiC technologies and different chipsets, maintaining the same module size. Introduced in 2017 with silicon EDT2 technology, it was optimized for efficiency in real-world driving. In 2021, a CoolSiC™ version was introduced, offering higher cell density and better performance. In 2023, the second generation, HybridPACK Drive G2, was launched with EDT3 (Si IGBT) and CoolSiC™ G2 MOSFET technologies, providing ease of use and integration options for sensors, enabling up to 300kW performance within 750V and 1200V classes.