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FFSP0865A

Name: onsemi FFSP0865A
Brand: onsemi
SKU: 863-FFSP0865A
Price: 4.39 SGD
Availability: InStock

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Mouser No:

863-FFSP0865A

Mfr. No:

FFSP0865A

Mfr.:

onsemi

Description:

SiC Schottky Diodes SIC TO220 SBD 8A 650V

Datasheet:

FFSP0865A Datasheet

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Learn more about onsemi FFSP0865A

In Stock: 1,316

Stock:: 1,316 Can Dispatch Immediately

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Factory Lead Time:: 11 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$4.39	$4.39
	$3.13	$31.30
	$2.50	$250.00
	$2.34	$1,170.00
	$2.25	$5,625.00
10,000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-220-2
Configuration:	Single
If - Forward Current:	8 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	49 A
Ir - Reverse Current:	200 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FFSP0865A
Packaging:	Tube
Brand:	onsemi
Pd - Power Dissipation:	98 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	50
Subcategory:	Diodes & Rectifiers
Tradename:	EliteSiC
Vr - Reverse Voltage:	650 V
Unit Weight:	2 g

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Datasheet

FFSP0865A Datasheet

PCN

CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
MXHTS:: 8541100101
ECCN:: EAR99

FFSP SiC Schottky Diodes

onsemi FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature-independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Wide Bandgap EliteSiC (Silicon Carbide) Devices

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Silicon Carbide Schottky Diodes

onsemi Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost. onsemi offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.

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D1 EliteSiC Diodes

onsemi D1 EliteSiC Diodes is a high-performance and versatile solution designed for modern power electronics applications. The onsemi D1 features voltage ratings of 650V, 1200V, and 1700V. These diodes offer the flexibility to meet various design requirements. Featuring different packages, such as D2PAK2, D2PAK3, TO-220-2, TO-247-2, and TO-247-3, the D1 EliteSiC Diodes provide designers with options to optimize board space and thermal performance.

650V EliteSiC (Silicon Carbide) Schottky Diodes

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