ENGNCP58935ABLTXG

Name: onsemi ENGNCP58935ABLTXG
Brand: onsemi
SKU: 863-ENGNCP58935ABLTX
Price: 27.23 SGD
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

863-ENGNCP58935ABLTX

Mfr. No:

ENGNCP58935ABLTXG

Mfr.:

onsemi

Description:

GaN FETs ENGINEERING SAMPLE - GaNEXUS SMART, 650V, 19m, TOLL

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

ENGNCP58935ABLTXG Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi ENGNCP58935ABLTXG

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PDSO-F9
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	75 A
Rds On - Drain-Source Resistance:	25 mOhms
Vgs - Gate-Source Voltage:	10 V to 24 V
Maximum Operating Temperature:	+ 150 C
Channel Mode:	Enhancement
Tradename:	GaNEXUS
Maximum Operating Frequency:	2 MHz
Technology:	GaN
Brand:	onsemi
Configuration:	Single
Fall Time:	13 ns
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Product:	Transistors
Product Type:	GaN FETs
Rise Time:	6.6 ns
Series:	NCP58935ABL
Factory Pack Quantity:	2400
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Type:	Enhancement Mode HEMT
Typical Turn-Off Delay Time:	8 ns
Typical Turn-On Delay Time:	23 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

ENGNCP58935ABLTXG Datasheet (PDF)

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

GaNEXUS™ GaN FETs

onsemi GaNEXUS™ Gallium Nitride Field-Effect Transistors (GaN FETs) use wide-bandgap material properties of GaN to deliver fast switching, low gate and output charge, and enhanced efficiency compared to silicon power transistors. These features enable higher operating frequencies, increased power density, and reduced magnetics in power conversion applications across low-, medium-, high-, and ultra-high voltages. The enhancement-mode discrete GaN high-electron-mobility transistors (HEMTs) offer a voltage range from 40V to 650V, including 650V GaNEXUS Smart GaN FETs with integrated protections to improve reliability and simplify system integration. Ideal applications for the onsemi GaNEXUS family include industrial automation, robotics, AI data centers, automotive electrification, and energy infrastructure.