DXTN07060BFG-7

Diodes Incorporated
621-DXTN07060BFG-7
DXTN07060BFG-7

Mfr.:

Description:
Bipolar Transistors - BJT Pwr Mid Perf Transistor

ECAD Model:
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In Stock: 1,351

Stock:
1,351 Can Dispatch Immediately
Factory Lead Time:
40 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2000)

Pricing (SGD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$1.15 $1.15
$0.716 $7.16
$0.463 $46.30
$0.354 $177.00
$0.32 $320.00
Full Reel (Order in multiples of 2000)
$0.267 $534.00
$0.246 $984.00
† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Diodes Incorporated
Product Category: Bipolar Transistors - BJT
RoHS:  
Si
SMD/SMT
PowerDI3333-8
NPN
Single
3 A
60 V
80 V
7 V
200 mV
3.1 W
175 MHz
- 55 C
+ 175 C
Reel
Cut Tape
MouseReel
Brand: Diodes Incorporated
Continuous Collector Current: 3 A
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
DC Collector/Base Gain hFE Min: 100
DC Current Gain hFE Max: 300
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 2000
Subcategory: Transistors
Unit Weight: 30 mg
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CNHTS:
8541290000
USHTS:
8541290055
TARIC:
8541210000
ECCN:
EAR99

DXTN07x Bipolar Junction Transistors (BJTs)

Diodes Incorporated DXTN07x Bipolar Junction Transistors (BJTs) are offered in smaller, thermally efficient PowerDI®3333-8 packages. These Diodes Incorporated transistors are in a PowerDI3333 surface mount 3.3mm x 3.3mm x 0.8mm package. The package occupies 70% less printed circuit board (PCB) space than the traditional small-outline transistor (SOT223). PowerDI3333 packages increase PCB throughput with wettable flanks, which help facilitate high-speed, automatic optical inspection (AOI) of solder joints. These NPN and PNP transistors can perform functions such as linear or LDO regulation, gate driving of MOSFETs or insulated-gate bipolar transistors (IGBT), and load switches across industrial and consumer applications.