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DMN53D0LW-13

Name: Diodes Incorporated DMN53D0LW-13
Brand: Diodes Incorporated
SKU: 621-DMN53D0LW-13
Price: 0.38 SGD
Availability: InStock

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Mouser No:

621-DMN53D0LW-13

Mfr. No:

DMN53D0LW-13

Mfr.:

Diodes Incorporated

Description:

MOSFETs FET Enhancement Mode N-Ch .3A 2.5Vgs 56pF

Datasheet:

DMN53D0LW-13 Datasheet (PDF)

ECAD Model:

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Learn more about Diodes Incorporated DMN53D0LW-13

In Stock: 9,709

Stock:: 9,709 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 10000)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.389	$0.39
	$0.265	$2.65
	$0.168	$16.80
	$0.104	$52.00
	$0.082	$82.00
	$0.072	$180.00
	$0.063	$315.00
Full Reel (Order in multiples of 10000)
	$0.047	$470.00
	$0.044	$880.00

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-323-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	50 V
Id - Continuous Drain Current:	360 mA
Rds On - Drain-Source Resistance:	2 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	800 mV
Qg - Gate Charge:	1.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	420 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Single
Fall Time:	11 ns
Forward Transconductance - Min:	80 mS
Product Type:	MOSFETs
Rise Time:	2.5 ns
Series:	DMN53
Factory Pack Quantity:	10000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	18.9 ns
Typical Turn-On Delay Time:	2.7 ns
Unit Weight:	6 mg

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Datasheet

DMN53D0LW-13 Datasheet (PDF)

Environmental Compliance (PDF)

CNHTS:: 8541210000
CAHTS:: 8542390000
USHTS:: 8541210095
JPHTS:: 854239099
TARIC:: 8542399000
MXHTS:: 8542399901
ECCN:: EAR99

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

DMN53xx N-Channel Enhancement Mode MOSFETs

Diodes Incorporated DMN53xx N-Channel Enhancement Mode MOSFETs are designed to minimize the on-state resistance RDS(ON) while maintaining superior switching performance. ESD protected to 2KV, these new generation MOSFETs feature low on-resistance, very low gate threshold voltage, low input capacitance, fast switching speeds, and low input/output leakage. Qualified to AEC-Q101 Standards for High Reliability, DMN53xx N-Channel Enhancement Mode MOSFETs are ideal for high-efficiency power management applications.

DMNxx MOSFETs

Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.