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C3M0075120K1

Name: Wolfspeed C3M0075120K1
Brand: Wolfspeed
SKU: 941-C3M0075120K1
Price: 12.93 SGD
Availability: InStock

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Mouser No:

941-C3M0075120K1

Mfr. No:

C3M0075120K1

Mfr.:

Wolfspeed

Description:

SiC MOSFETs SiC, MOSFET, 75m, 1200V, TO-247-4 LP, Industrial

Datasheet:

C3M0075120K1 Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Wolfspeed
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	32 A
Rds On - Drain-Source Resistance:	135 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 19 V
Vgs th - Gate-Source Threshold Voltage:	3.8 V
Qg - Gate Charge:	53 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	145 W
Channel Mode:	Enhancement
Brand:	Wolfspeed
Configuration:	Single
Fall Time:	11 ns
Forward Transconductance - Min:	10.5 S
Product:	MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	22 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	Silicon Carbide Power MOSFET
Typical Turn-Off Delay Time:	29 ns
Typical Turn-On Delay Time:	8 ns

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Datasheet

C3M0075120K1 Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Madagascar
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Silicon Carbide 1200V MOSFETs & Diodes

Wolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes offer higher efficiency in demanding environments and are designed for high-power applications. The 1200V SiC MOSFETs feature stable Rds(on) over-temperature and avalanche ruggedness. The MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as these offer a 15V gate drive. The 1200V SiC MOSFETs improve system-level efficiency, lower switching and conduction losses, and improve system-level power density. The 1200V SiC Schottky diodes feature the merged PiN Schottky (MPS) design technology, which is more robust and reliable than typical Schottky barrier diodes. The diodes offer high surge current capability, high-frequency operation, easy parallel operation, and reduced heat sink requirements. The MOSFETs and diodes are ideal for uninterruptible power supplies (UPS), motor control and drives, switched-mode power supplies (SMPS), electric vehicle charging, and high-voltage DC/DC converters.

TO-247-4 Low Profile 1200V SiC Power MOSFETs

Wolfspeed TO-247-4 Low Profile 1200V Silicon Carbide (SiC) Power MOSFETs feature high-speed switching with low capacitances and high blocking voltage with low on-resistance. These power MOSFETs reduce switching losses and cooling requirements, and minimise gate ringing. The 1200V SiC power MOSFETs incorporate a fast intrinsic diode with low reverse recovery (Q_rr). These power MOSFETs increase power density and system switching frequency. The 1200V SiC power MOSFETs come in optimised packages with separate driver source pins and are available in a lower profile TO-247-4 package body. These power MOSFETs are halogen-free and RoHS-compliant. Typical applications include motor control, EV battery chargers, high voltage DC/DC converters, solar/ESS, UPS and enterprise PSU.

1200V Silicon Carbide Power MOSFETs

Wolfspeed 1200V Silicon Carbide Power MOSFETs set the standard for performance, ruggedness and ease of design. Wolfspeed MOSFETs feature fast switching and low switching loss capabilities, ensuring significant improvement in system efficiency, power density and overall BOM cost compared to silicon MOSFET and IGBT incumbents.