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NXH030P120M3F1PTG

Name: onsemi NXH030P120M3F1PTG
Brand: onsemi
SKU: 863-NXH030P12M3F1PTG
Price: 95.36 SGD
Availability: InStock

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Mouser No:

863-NXH030P12M3F1PTG

Mfr. No:

NXH030P120M3F1PTG

Mfr.:

onsemi

Description:

MOSFET Modules 30M 1200V 40A M3S SIC HALF BRIDGE MODULE

Lifecycle:

New At Mouser

Datasheet:

NXH030P120M3F1PTG Datasheet

ECAD Model:

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In Stock: 14

Stock:: 14 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Ext. Price:

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$95.36	$95.36
	$79.52	$795.20

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Screw Mount
Package/Case:	PIM-18
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	42 A
Rds On - Drain-Source Resistance:	38.5 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.4 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	100 W
Series:	NXH030P120M3F1PTG
Packaging:	Tray
Brand:	onsemi
Configuration:	Half-Bridge
Fall Time:	9.4 ns
Height:	12.35 mm
Length:	63.3 mm
Product Type:	MOSFET Modules
Rise Time:	6.6 ns
Factory Pack Quantity:	28
Subcategory:	Discrete and Power Modules
Tradename:	EliteSiC
Type:	Half Bridge
Typical Turn-Off Delay Time:	84.8 ns
Typical Turn-On Delay Time:	19.6 ns
Width:	34.1 mm

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Datasheet

NXH030P120M3F1PTG Datasheet

Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

NXH0xxP120M3F1 Silicone Carbide (SiC) Modules

onsemi NXH0xxP120M3F1 Silicone Carbide (SiC) Modules contain 8mΩ/1200V, 10mΩ/1200V, 15mΩ/1200V, and 30mΩ/1200V M3S SiC MOSFETs based on half-bridge topology and a thermistor in a F1 package. These modules feature pre-applied Thermal Interface Material (TIM) and without pre-applied TIM. The NXH0xxP120M3F1 modules are designed with press-fit pins and are Pb-free, Halide-free, and RoHS-compliant. These power modules are used in solar inverters, industrial power, Electric Vehicle (EV) charging stations, and Uninterruptible Power Supplies (UPS).