NXH015P120M3F1PTG

onsemi
863-NXH015P12M3F1PTG
NXH015P120M3F1PTG

Mfr.:

Description:
MOSFET Modules 15M OHM 1200V 40A M3S SIC HALF BRIDGE MODULE

Lifecycle:
New At Mouser
Datasheet:
ECAD Model:
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In Stock: 33

Stock:
33
Can Dispatch Immediately
On Order:
56
Expected 14/7/2026
Factory Lead Time:
22
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (SGD)

Qty. Unit Price
Ext. Price
$105.24 $105.24
$93.99 $939.90

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFET Modules
RoHS:  
SiC
Screw Mount
PIM-18
N-Channel
2 Channel
77 A
20 mOhms
- 10 V, + 22 V
2.4 V
- 40 C
+ 150 C
198 W
NXH015P120M3F1PTG
Tray
Brand: onsemi
Configuration: Half-Bridge
Fall Time: 8 ns
Height: 12.35 mm
Length: 63.3 mm
Product Type: MOSFET Modules
Rise Time: 9 ns
Factory Pack Quantity: 28
Subcategory: Discrete and Power Modules
Tradename: EliteSiC
Type: Half Bridge
Typical Turn-Off Delay Time: 94 ns
Typical Turn-On Delay Time: 25 ns
Width: 34.1 mm
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Attributes selected: 0

Datasheet

Compliance Codes
CNHTS:
8504409100
USHTS:
8542390070
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Korea, Republic of
The country is subject to change at the time of shipment.

NXH0xxP120M3F1 Silicone Carbide (SiC) Modules

onsemi NXH0xxP120M3F1 Silicone Carbide (SiC) Modules contain 8mΩ/1200V, 10mΩ/1200V, 15mΩ/1200V, and 30mΩ/1200V M3S SiC MOSFETs based on half-bridge topology and a thermistor in a F1 package. These modules feature pre-applied Thermal Interface Material (TIM) and without pre-applied TIM. The NXH0xxP120M3F1 modules are designed with press-fit pins and are Pb-free, Halide-free, and RoHS-compliant. These power modules are used in solar inverters, industrial power, Electric Vehicle (EV) charging stations, and Uninterruptible Power Supplies (UPS).

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