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VSLB3940

Name: Vishay VSLB3940
Brand: Vishay Semiconductors
SKU: 782-VSLB3940
Price: 0.87 SGD
Availability: InStock

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Mouser No:

782-VSLB3940

Mfr. No:

VSLB3940

Mfr.:

Vishay Semiconductors

Description:

Infrared Emitters 940nm, T-1 65mW/sr, +/-22deg.

Datasheet:

VSLB3940 Datasheet

ECAD Model:

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More Information

Learn more about Vishay Semiconductors VSLB3940

In Stock: 14,326

Stock:: 14,326

Can Dispatch Immediately

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On Order:: 20,000

Expected 25/9/2026
Factory Lead Time:: 7

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$0.876	$0.88
	$0.60	$6.00
	$0.502	$50.20
	$0.424	$212.00
	$0.382	$382.00
	$0.374	$935.00
	$0.349	$1,745.00
	$0.328	$3,280.00
	$0.314	$7,850.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	Infrared Emitters
RoHS:
Mounting Style:	Through Hole
Wavelength:	940 nm
Radiant Intensity:	65 mW/sr
Beam Angle:	22 deg
If - Forward Current:	100 mA
Vf - Forward Voltage:	1.35 V
Power Rating:	160 mW
Minimum Operating Temperature:	- 25 C
Maximum Operating Temperature:	+ 85 C
Packaging:	Bulk
Brand:	Vishay Semiconductors
Fall Time:	15 ns
Illumination Colour:	Infrared
Product Type:	IR Emitters (IR LEDs)
Rise Time:	15 ns
Factory Pack Quantity:	5000
Subcategory:	Infrared Data Communications
Unit Weight:	280 mg

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Datasheet

VSLB3940 Datasheet

Application Notes

Models

VSLB3940 Symbol & Footprint by SnapMagic

PCN

Technical Resources

REACH Certificate (PDF)

Compliance Codes

CNHTS:: 8541410090
TARIC:: 8541410000
CAHTS:: 8541410000
USHTS:: 8541410000
JPHTS:: 854141000
MXHTS:: 8541410100
BRHTS:: 85414011
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

IR Emitters & Silicon PIN Photodiode

Vishay Semiconductors IR Emitters and Silicon PIN Photodiodes feature an 830nm to 950nm wavelength range with high radiant sensitivity from 1mW/sr to 1800mW/sr. These emitters provide double heterojunction infrared emitters with the lowest forward voltages and highly efficient homojunction emitters. The photodiodes offer the broadest selection of high-speed, low-dark current PIN photodiodes that are specifically designed to achieve excellent sensitivity together with high reliability.