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NVMFS4C306NET1G

Name: onsemi NVMFS4C306NET1G
Brand: onsemi
SKU: 863-NVMFS4C306NET1G
Price: 1.78 SGD
Availability: InStock

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Mouser No:

863-NVMFS4C306NET1G

Mfr. No:

NVMFS4C306NET1G

Mfr.:

onsemi

Description:

MOSFETs TRENCH 30V NCH

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NVMFS4C306NET1G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVMFS4C306NET1G

In Stock: 1,341

Stock:: 1,341 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$1.78	$1.78
	$1.11	$11.10
	$0.733	$73.30
	$0.578	$289.00
	$0.499	$499.00
Full Reel (Order in multiples of 1500)
	$0.457	$685.50
	$0.453	$1,359.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8FL
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	71 A
Rds On - Drain-Source Resistance:	3.4 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	2.1 V
Qg - Gate Charge:	26 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	36.5 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Fall Time:	3 ns
Product Type:	MOSFETs
Rise Time:	28 ns
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	8 ns

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Datasheet

NVMFS4C306NET1G Datasheet

USHTS:: 8541290095
TARIC:: 8541290000
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.