N01S830BAT22I

onsemi
863-N01S830BAT22I
N01S830BAT22I

Mfr.:

Description:
SRAM 1MB 3V BATT BU FUNCT

ECAD Model:
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In Stock: 1,535

Stock:
1,535 Can Dispatch Immediately
Factory Lead Time:
21 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (SGD)

Qty. Unit Price
Ext. Price
$5.50 $5.50
$5.32 $53.20
$5.00 $100.00
$4.61 $230.50
$4.52 $452.00
$4.35 $870.00
$4.31 $2,155.00

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
$7.46
Min:
1

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SRAM
RoHS:  
1 Mbit
128 k x 8
25 ns
20 MHz
SPI
5.5 V
2.5 V
20 mA
- 40 C
+ 85 C
SMD/SMT
TSSOP-8
Tube
Brand: onsemi
Memory Type: SDR
Moisture Sensitive: Yes
Product Type: SRAM
Series: N01S830
Factory Pack Quantity: 100
Subcategory: Memory & Data Storage
Type: Synchronous
Unit Weight: 400 mg
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Attributes selected: 0

CNHTS:
8542329000
CAHTS:
8542390000
USHTS:
8542320041
TARIC:
8542324500
MXHTS:
8542399901
ECCN:
EAR99

N01S8 1Mb Ultra-Low Power Serial SRAM

onsemi N01S8x 1Mb Ultra-Low Power Serial SRAM offers high-speed performance and low power. onsemi N01S8x SRAM operates with a single chip select (CS) input and uses a simple SPI protocol. In SPI mode, a single data-in (SI) and data-out (SO) line is used along with the clock (SCK) to access data within these devices. In DUAL mode, two multiplexed data-in/data-out (SIO0-SIO1) lines are used. In QUAD mode, four multiplexed data-in/data-out (SIO0-SIO3) lines are used with the clock to access the memory. N01S8x SRAM operates over a wide temperature range of -40°C to +85°C and is offered in a 8-lead TSSOP package.