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XPQR8308QB,LXHQ

Name: Toshiba XPQR8308QB,LXHQ
Brand: Toshiba
SKU: 757-XPQR8308QBLXHQ
Price: 8.06 SGD
Availability: InStock

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Mouser No:

757-XPQR8308QBLXHQ

Mfr. No:

XPQR8308QB,LXHQ

Mfr.:

Toshiba

Description:

MOSFETs L-TOGL N-CH 80V 350A

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

XPQR8308QB,LXHQ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba XPQR8308QB,LXHQ

In Stock: 4,446

Stock:: 4,446 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1500)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$8.06	$8.06
	$5.63	$56.30
	$4.56	$456.00
	$4.04	$2,020.00
	$3.48	$3,480.00
Full Reel (Order in multiples of 1500)
	$3.46	$5,190.00
9,000	Quote

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	2-10AG1A
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	350 A
Rds On - Drain-Source Resistance:	830 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	305 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	750 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Fall Time:	100 ns
Product Type:	MOSFETs
Rise Time:	85 ns
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	335 ns
Typical Turn-On Delay Time:	130 ns

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Datasheet

XPQR8308QB,LXHQ Datasheet (PDF)

Application Notes

Models

Product Catalogs

Selection Guide 2024 - MOSFETs

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

L-TOGL & S-TOGL AEC-Q 40V/80V/100V N-Ch MOSFETs

Toshiba L-TOGL and S-TOGL AEC-Q101 40V/80V/100V N-Channel MOSFETs deliver ultra-low on-resistance, a high drain current rating, and high heat dissipation. This is achieved by combining high heat dissipation packages [L-TOGL (large transistor outline gull-wing leads) and S-TOGL (small transistor outline gull-wing leads)] with the U-MOS IX-H and U-MOS X-H chip processes. Toshiba L-TOGL and S-TOGL MOSFETs also offer high current capability and high heat dissipation to help improve power density in a wide variety of automotive applications. The L-TOGL package is equivalent in size to the existing TO-220SM(W) package. However, XPQR3004PB greatly improves the current rating and significantly lowers the on-resistance to 0.23mΩ typical. L-TOGLs optimized package footprint also helps improve thermal characteristics when compared to the same-sized TO-220SM(W) package.