TK6A65D(STA4,Q,M)

Toshiba
757-TK6A65DSTA4QM
TK6A65D(STA4,Q,M)

Mfr.:

Description:
MOSFETs N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 149

Stock:
149
Can Dispatch Immediately
On Order:
200
Expected 17/4/2026
Factory Lead Time:
32
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (SGD)

Qty. Unit Price
Ext. Price
$3.32 $3.32
$2.10 $21.00
$1.71 $171.00
$1.29 $645.00
$1.10 $1,100.00
$1.09 $5,450.00

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
650 V
6 A
1.11 Ohms
- 30 V, 30 V
2 V
20 nC
- 55 C
+ 150 C
45 W
Enhancement
MOSVII
Tube
Brand: Toshiba
Configuration: Single
Product Type: MOSFETs
Series: TK6A65D
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 2 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541219000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

π-MOS VII MOSFETs

Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.