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TK115N65Z5,S1F

Name: Toshiba TK115N65Z5,S1F
Brand: Toshiba
SKU: 757-TK115N65Z5S1F
Price: 9.45 SGD
Availability: InStock

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See Product Specifications

Mouser No:

757-TK115N65Z5S1F

Mfr. No:

TK115N65Z5,S1F

Mfr.:

Toshiba

Description:

MOSFETs N-ch MOSFET, 650 V, 0.115 O@10V, TO-247, DTMOS?

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TK115N65Z5,S1F Datasheet

ECAD Model:

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More Information

Learn more about Toshiba TK115N65Z5,S1F

In Stock: 30

Stock:: 30 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$9.45	$9.45
	$7.19	$71.90
	$4.55	$546.00
	$4.00	$2,040.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	24 A
Rds On - Drain-Source Resistance:	115 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	42 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	190 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	3.7 ns
Product Type:	MOSFETs
Rise Time:	37 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	83 ns
Typical Turn-On Delay Time:	70 ns

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Datasheet

TK115N65Z5,S1F Datasheet

Application Notes

Models

Product Catalogs

Selection Guide 2025 - MOSFETs

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

TKx Silicon N-Channel MOSFETs

Toshiba TKx Silicon N-Channel MOSFETs are available in U-MOSX-H and DTMOSVI types and offer exceptional performance characteristics. These MOSFETs are designed with fast reverse recovery times that enhance efficiency in high-speed switching applications by reducing the delay between the turn-off and turn-on states. The low drain-source on-resistance [R_DS(on)] contributes to minimal power losses and improved thermal management, making them ideal for applications requiring high current handling with low energy dissipation.