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CSD16321Q5

Name: Texas Instruments CSD16321Q5
Brand: Texas Instruments
SKU: 595-CSD16321Q5
Price: 3.79 SGD
Availability: InStock

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See Product Specifications

Mouser No:

595-CSD16321Q5

Mfr. No:

CSD16321Q5

Mfr.:

Texas Instruments

Description:

MOSFETs N-Channel NexFET Pow er MOSFET

Datasheet:

CSD16321Q5 Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD16321Q5

In Stock: 11

Stock:: 11

Can Dispatch Immediately

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On Order:: 5,000

Expected 16/7/2026
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$3.79	$3.79
	$2.32	$23.20
	$1.68	$168.00
	$1.35	$675.00
	$1.26	$1,260.00
Full Reel (Order in multiples of 2500)
	$1.19	$2,975.00

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD16321Q5T

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$2.88

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSON-CLIP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	5 A
Rds On - Drain-Source Resistance:	2.4 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	900 mV
Qg - Gate Charge:	14 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	113 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Development Kit:	TPS51218EVM-49, TPS40304EVM-353
Fall Time:	17 ns
Forward Transconductance - Min:	150 S
Product Type:	MOSFETs
Rise Time:	15 ns
Series:	CSD16321Q5
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	27 ns
Typical Turn-On Delay Time:	9 ns
Unit Weight:	117.400 mg

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Philippines
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.