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S34ML08G201TFI000

Name: SkyHigh Memory S34ML08G201TFI000
Brand: SkyHigh Memory
SKU: 797-34ML08G201TFI000
Price: 16.67 SGD
Availability: InStock

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Mouser No:

797-34ML08G201TFI000

Mfr. No:

S34ML08G201TFI000

Mfr.:

SkyHigh Memory

Description:

NAND Flash SLC,8Gb,3x,3V,x8,4bit,TS248,

Datasheet:

S34ML08G201TFI000 Datasheet (PDF)

ECAD Model:

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Learn more about SkyHigh Memory S34ML08G201TFI000

In Stock: 524

Stock:: 524

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On Order:: 864

Expected 12/6/2026
Factory Lead Time:: 22

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$16.67	$16.67
	$15.48	$154.80
	$15.01	$375.25
	$14.65	$732.50
	$14.29	$1,371.84

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SkyHigh Memory
Product Category:	NAND Flash
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TSOP-I-48
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Packaging:	Tray
Active Read Current - Max:	30 mA
Brand:	SkyHigh Memory
Data Bus Width:	8 bit
Interface Type:	Parallel
Memory Size:	8 Gbit
Moisture Sensitive:	Yes
Organisation:	1 G x 8
Product Type:	NAND Flash
Factory Pack Quantity:	96
Subcategory:	Memory & Data Storage
Supply Current - Max:	35 mA
Supply Voltage - Max:	3.6 V
Supply Voltage - Min:	2.7 V
Timing Type:	Asynchronous
Unit Weight:	17.849 g

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Datasheet

S34ML08G201TFI000 Datasheet (PDF)

PCN

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CNHTS:: 8542329000
CAHTS:: 8542320040
USHTS:: 8542320051
JPHTS:: 854232031
KRHTS:: 8542321090
MXHTS:: 8542320201
ECCN:: 3A991.b.1.a

S34ML0xGx SLC NAND Flash Memory

SkyHigh Memory S34ML0xGx SLC NAND Flash Memory is the first family of Single-Level Cell (SLC) NAND products using 4x nm floating-gate technology, targeted specifically for data storage in automotive, consumer, and networking applications. The SLC NAND is offered in densities from 1Gb to 8Gb, in 3.0V and 1.8V families that feature high performance, extended temperature range, long-term product support, and stringent reliability demands, such as 1-bit, 4-bit Error Correction Code (ECC). The NAND cell provides the most cost-effective solution for the solid-state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.