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STP8N120K5

Name: STMicroelectronics STP8N120K5
Brand: STMicroelectronics
SKU: 511-STP8N120K5
Price: 9.55 SGD
Availability: InStock

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Mouser No:

511-STP8N120K5

Mfr. No:

STP8N120K5

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 1200 V, 1.65 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-220 package

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Datasheet:

STP8N120K5 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about STMicroelectronics STP8N120K5

In Stock: 165

Stock:: 165

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On Order:: 1,000

Expected 3/8/2026
Factory Lead Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$9.55	$9.55
	$5.09	$50.90
	$4.66	$466.00
	$3.89	$1,945.00
	$3.64	$3,640.00
	$3.56	$7,120.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	6 A
Rds On - Drain-Source Resistance:	2 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	13.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	130 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	27 ns
Product Type:	MOSFETs
Rise Time:	11 ns
Series:	STP8N120K5
Factory Pack Quantity:	1000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	15.5 ns
Unit Weight:	2 g

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Datasheet

STP8N120K5 Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best R_DS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.