STGW30H60DFB

STMicroelectronics
511-STGW30H60DFB
STGW30H60DFB

Mfr.:

Description:
IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT
Complete Your Design

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about STMicroelectronics STGW30H60DFB

Availability

Stock:
0

You can still purchase this product for backorder.

Factory Lead Time:
14 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (SGD)

Qty. Unit Price
Ext. Price
$4.16 $4.16
$2.24 $22.40
$1.50 $150.00
$1.39 $834.00
$1.32 $1,584.00
$1.27 $3,810.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
600 V
1.55 V
- 20 V, 20 V
60 A
260 W
- 55 C
+ 175 C
STGW30H60DFB
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 30 A
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
Unit Weight: 38 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.