STB28N60DM2

STMicroelectronics
511-STB28N60DM2
STB28N60DM2

Mfr.:

Description:
MOSFETs N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in D2PAK package
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Datasheet:
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In Stock: 83

Stock:
83 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (SGD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$5.92 $5.92
$3.91 $39.10
$2.77 $277.00
$2.52 $1,260.00
Full Reel (Order in multiples of 1000)
$2.31 $2,310.00
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
600 V
22 A
130 mOhms
- 25 V, 25 V
3 V
39 nC
- 55 C
+ 150 C
190 W
Enhancement
MDmesh
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Configuration: Single
Product Type: MOSFETs
Series: STB28N60DM2
Factory Pack Quantity: 1000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 4 g
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.

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