MRF101AN

NXP Semiconductors
771-MRF101AN
MRF101AN

Mfr.:

Description:
RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V

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In Stock: 3,618

Stock:
3,618 Can Dispatch Immediately
Factory Lead Time:
10 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (SGD)

Qty. Unit Price
Ext. Price
$69.78 $69.78
$57.06 $570.60
$50.32 $1,258.00
$48.11 $4,811.00
$46.79 $11,697.50
500 Quote

Product Attribute Attribute Value Select Attribute
NXP
Product Category: RF MOSFET Transistors
RoHS:  
REACH - SVHC:
N-Channel
Si
8.8 A
133 V
1.8 MHz to 250 MHz
21.1 dB
115 W
- 40 C
+ 150 C
Through Hole
TO-220-3
Tube
Brand: NXP Semiconductors
Forward Transconductance - Min: 7.1 S
Number of Channels: 1 Channel
Pd - Power Dissipation: 182 W
Product Type: RF MOSFET Transistors
Series: MRF101AN
Factory Pack Quantity: 50
Subcategory: MOSFETs
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: + 10 V
Vgs th - Gate-Source Threshold Voltage: 2.7 V
Part # Aliases: 935377233129
Unit Weight: 60 mg
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

MRF101 RF Power LDMOS Transistors

NXP Semiconductors MRF101 RF Power LDMOS Transistors are highly-rugged N-channel enhancement mode lateral MOSFETs designed to exhibit high performance up to 250MHz. These transistors integrate ESD protection with a greater negative gate-source voltage range for improved Class C operation. Both the transistors come in two pin-out versions mirroring each other to support push-pull configurations for further flexibility. The MRF101 transistors are ideal for high Voltage Standing Wave Ratio (VSWR) industrial, scientific, and medical applications.