FS410R12A7P1BHPSA1

Infineon Technologies
726-FS410R12A7P1BHPS
FS410R12A7P1BHPSA1

Mfr.:

Description:
MOSFET Modules HybridPACK Drive G2 module

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 2

Stock:
2
Can Dispatch Immediately
On Order:
6
Factory Lead Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (SGD)

Qty. Unit Price
Ext. Price
$743.41 $743.41
$661.88 $7,942.56

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFET Modules
RoHS:  
Screw Mount
HybridPACK
N-Channel
- 40 C
+ 175 C
775 W
Tray
Brand: Infineon Technologies
Fall Time: 77 ns
Product: MOSFET Modules
Product Type: MOSFET Modules
Rise Time: 46 ns
Factory Pack Quantity: 6
Subcategory: Discrete and Power Modules
Typical Turn-Off Delay Time: 466 ns
Typical Turn-On Delay Time: 107 ns
Vf - Forward Voltage: 1.68 V
Vr - Reverse Voltage: 1.2 kV
Part # Aliases: FS410R12A7P1B SP005675819
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CNHTS:
8504409100
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

HybridPACK™ Drive G2 Modules

Infineon Technologies HybridPACK™ Drive G2 Modules are compact power modules designed for hybrid and electric vehicle traction. The Infineon Technologies G2 modules offer scalable performance levels using Si or SiC technologies and different chipsets, maintaining the same module size. Introduced in 2017 with silicon EDT2 technology, it was optimized for efficiency in real-world driving. In 2021, a CoolSiC™ version was introduced, offering higher cell density and better performance. In 2023, the second generation, HybridPACK Drive G2, was launched with EDT3 (Si IGBT) and CoolSiC™ G2 MOSFET technologies, providing ease of use and integration options for sensors, enabling up to 300kW performance within 750V and 1200V classes.