FS01MR08A8MA2CHPSA1

Name: Infineon FS01MR08A8MA2CHPSA1
Brand: Infineon Technologies
SKU: 726-FS01MR08A8MA2CHP
Price: 1685.75 SGD
Availability: InStock

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Mouser No:

726-FS01MR08A8MA2CHP

Mfr. No:

FS01MR08A8MA2CHPSA1

Mfr.:

Infineon Technologies

Description:

Discrete Semiconductor Modules HybridPACK Drive G2 module with SiC MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

FS01MR08A8MA2CHPSA1 Datasheet (PDF)

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In Stock: 5

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Factory Lead Time:: 39 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$1,685.75	$1,685.75

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	SiC MOSFET Modules
Type:	Bridge Power Module
Technology:	SiC
Vf - Forward Voltage:	4.64 V
Vgs - Gate-Source Voltage:	- 5 V, + 19 V
Mounting Style:	Press Fit
Series:	HybridPACK
Packaging:	Tray
Brand:	Infineon Technologies
Fall Time:	53 ns
Id - Continuous Drain Current:	620 A
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	1.69 mOhms
Rise Time:	108 ns
Factory Pack Quantity:	6
Subcategory:	Discrete and Power Modules
Typical Turn-Off Delay Time:	318 ns
Typical Turn-On Delay Time:	128 ns
Vds - Drain-Source Breakdown Voltage:	750 V
Vgs th - Gate-Source Threshold Voltage:	3.9 V
Part # Aliases:	FS01MR08A8MA2C SP006071563

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Datasheet

FS01MR08A8MA2CHPSA1 Datasheet (PDF)

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ECCN:: EAR99

HybridPACK™ Drive G2 Modules

Infineon Technologies HybridPACK™ Drive G2 Modules are compact power modules designed for hybrid and electric vehicle traction. The Infineon Technologies G2 modules offer scalable performance levels using Si or SiC technologies and different chipsets, maintaining the same module size. Introduced in 2017 with silicon EDT2 technology, it was optimized for efficiency in real-world driving. In 2021, a CoolSiC™ version was introduced, offering higher cell density and better performance. In 2023, the second generation, HybridPACK Drive G2, was launched with EDT3 (Si IGBT) and CoolSiC™ G2 MOSFET technologies, providing ease of use and integration options for sensors, enabling up to 300kW performance within 750V and 1200V classes.