FM25640B-G

Infineon Technologies
877-FM25640B-G
FM25640B-G

Mfr.:

Description:
F-RAM 64Kb Serial SPI 5V FRAM

ECAD Model:
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In Stock: 629

Stock:
629 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (SGD)

Qty. Unit Price
Ext. Price
$5.03 $5.03
$3.84 $38.40
$3.75 $93.75
$3.63 $181.50
$3.61 $361.00
$3.54 $6,867.60

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
$5.35
Min:
1

Similar Product

Infineon Technologies FM25640B-GTR
Infineon Technologies
F-RAM 64Kb Serial SPI 5V FRAM

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: F-RAM
RoHS:  
64 kbit
SPI
20 MHz
8 k x 8
SOIC-8
4.5 V
5.5 V
- 40 C
+ 85 C
FM25640B-G
Tube
Brand: Infineon Technologies
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Operating Supply Voltage: 5 V
Product Type: FRAM
Factory Pack Quantity: 1940
Subcategory: Memory & Data Storage
Unit Weight: 540 mg
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CNHTS:
8542329090
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320905
KRHTS:
8542321040
TARIC:
8542329000
MXHTS:
8471600499
ECCN:
EAR99

WICED IOT Platform

Infineon Technologies WICED IoT Platform is a portfolio of wireless technologies ranging from Wi-Fi® and BLUETOOTH® to microcontrollers (MCU) built specifically for the IoT. These design-ready, secure products streamline and simplify designs. Infineon has over 20 ecosystem partners working to crack persistent design problems.  

Serial FRAM Nonvolatile Memory Devices

Infineon Technologies Serial F-RAM (ferroelectric RAM) memories combine the nonvolatile data storage capability of ROM with the fast speeds of RAM. Serial F-RAM features a variety of interface and density options, including SPI and I2C interfaces, industry-standard packages, and densities ranging from 4KB to 4MB. Infineon Serial F-RAMs have three distinct advantages over other nonvolatile memory technologies: fast write speed, extremely high endurance, and low power consumption. Serial F-RAMs provide 100 trillion cycle endurance, exceeding the 1 million write cycle limitation of EEPROM. This eliminates the need for wear leveling to support a product over its lifespan.